Vishay Intertechnologies SI5433BDC-T1-E3
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SI5433BDC-T1-E3
2668-SI5433BDC-T1-E3
晶体管 - 特殊用途
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大陆
立即发货

Small Signal Field-Effect Transistor, 4.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, 1206-8, CHIPFET-8
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SI5433BDC-T1-E3详情
Vishay Intertechnologies SI5433BDC-T1-E3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
材料
polyolefin
终端数量
8
晶体管元件材料
SILICON
外壳材料
1
Type of capacitor
ceramic
Kind of capacitor
MLCC
Capacitance tolerance
±0.25pF
Mounting
SMD
Case - inch
0201
Case - mm
0603
Capacitors series
GCQ
Inner diameter before shrink
50 mm
Inner diameter after shrink
25 mm
Wall thickness before shrink
0.65 ±0.15 mm
Wall thickness after shrink
1.25 ±0.15 mm
Transport packaging size/quantity
105*26*26/100
Gross weight
159.50
Rohs Code
有
Part Life Cycle Code
Obsolete
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
LEAD FREE, 1206-8, CHIPFET-8
Drain Current-Max (ID)
4.8 A
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
小概要
Operating temperature
-55...125°C
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
哑光锡
颜色
black
电容量
7pF
端子位置
DUAL
终端形式
C 弯管
Reach合规守则
compliant
JESD-30代码
R-XDSO-C8
资历状况
不合格
电介质
C0G (NP0)
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
极性/通道类型
P-CHANNEL
Operating temperature range
-55...+105 °C
漏极-源极导通最大电阻
0.037 Ω
DS 击穿电压-最小值
20 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
2.5 W
Shrink temperature
+70...+110 °C
饱和电流
1
Operating voltage
50V
Shrink ratio
2:1
长度
1 m
SI5433BDC-T1-E3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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