Vishay Intertechnologies SI7434DP-T1-GE3
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SI7434DP-T1-GE3
2668-SI7434DP-T1-GE3
晶体管 - 特殊用途
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大陆
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Power Field-Effect Transistor, 2.3A I(D), 250V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8
1最小包装量--
SI7434DP-T1-GE3详情
Vishay Intertechnologies SI7434DP-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Contact plating
tinned
表面安装
YES
Number of pins
29
终端数量
5
晶体管元件材料
SILICON
外壳材料
1
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
2.54mm
Electrical mounting
THT
Connector pinout layout
1x29
Gross weight
2.08 g
Rohs Code
有
Part Life Cycle Code
生命周期结束
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
ROHS COMPLIANT, POWERPAK, SOP-8
Drain Current-Max (ID)
2.3 A
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
小概要
Operating temperature
-40...200°C
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
Matte Tin (Sn)
端子位置
DUAL
终端形式
C 弯管
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
Current rating
3A
时间@峰值回流温度-最大值(s)
30
JESD-30代码
R-XDSO-C5
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.155 Ω
脉冲漏极电流-最大值(IDM)
40 A
DS 击穿电压-最小值
250 V
雪崩能量等级(Eas)
8.4 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
5.2 W
Rated voltage
125V
个人资料
bronze
饱和电流
1
Plating thickness
4µm
Flammability rating
UL94V-0
SI7434DP-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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