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价格梯度
内地含税价
1
¥35.051895
10
¥33.067823
100
¥31.196063
500
¥29.430248
1000
¥27.764386
Vishay Intertechnologies SI7439DP-T1-E3
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- 对比
SI7439DP-T1-E3
2668-SI7439DP-T1-E3
晶体管 - 特殊用途
--
大陆
立即发货

Power Field-Effect Transistor, 3A I(D), 150V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
--最小包装量--
¥
总价: ¥
SI7439DP-T1-E3详情
Vishay Intertechnologies SI7439DP-T1-E3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
5
晶体管元件材料
SILICON
外壳材料
1
Transport packaging size/quantity
34*23*13/10000
Case material
white ceramic
Type of capacitor
ceramic
Kind of capacitor
MLCC
Mounting
SMD
Case - inch
0805
Case - mm
2012
Capacitors series
KGM
Gross weight
0.021 g
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SOP-8
Drain Current-Max (ID)
3 A
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
小概要
Time
(max) trigger at I=2.75 x Irated - 2 s
Case diameter
5.2 mm
Operating temperature
-60…+85 °C
容差
±10%
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
Matte Tin (Sn) - annealed
附加功能
ULTRA LOW-ON RESISTANCE
电容量
4.7µF
端子位置
DUAL
终端形式
C 弯管
峰值回流焊温度(摄氏度)
260
深度
20 mm
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
30
JESD-30代码
R-XDSO-C5
资历状况
不合格
电介质
X5R
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
Fuse type
Fast-acting cylindrical fuse link series ВП2Б-1 (analog)
极性/通道类型
P-CHANNEL
Rated current
2 A
漏极-源极导通最大电阻
0.09 Ω
脉冲漏极电流-最大值(IDM)
50 A
DS 击穿电压-最小值
150 V
雪崩能量等级(Eas)
80 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
5.4 W
Rated voltage
250 (AC) V
饱和电流
1
Operating voltage
25V
SI7439DP-T1-E3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies






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