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价格梯度
内地含税价
1
¥9.566564
10
¥9.025056
100
¥8.51421
500
¥8.032268
1000
¥7.577611
Vishay Intertechnologies SI7463DP-T1-GE3
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- 对比
SI7463DP-T1-GE3
2668-SI7463DP-T1-GE3
晶体管 - 特殊用途
--
大陆
立即发货

Power Field-Effect Transistor, 11A I(D), 40V, 0.0092ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
--最小包装量--
¥
总价: ¥
SI7463DP-T1-GE3详情
Vishay Intertechnologies SI7463DP-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
13 Weeks
表面安装
YES
终端数量
5
晶体管元件材料
SILICON
外壳材料
1
Gross weight
21.60
Transport packaging size/quantity
48*32*27/500
Noal resistance
2.2 kΩmin
Wear resistance
10000 cycles
Allowable deviation
20 %
Nominal power dissipation
2 W
Maximum operating voltage
250 V
Noise level
47 mV
Rohs Code
有
Part Life Cycle Code
不推荐
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Drain Current-Max (ID)
11 A
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
小概要
JESD-609代码
e3
ECCN 代码
EAR99
类型
Rotary potentiometer
端子表面处理
Matte Tin (Sn) - annealed
端子位置
DUAL
终端形式
C 弯管
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
30
JESD-30代码
R-XDSO-C5
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
Insulation resistance
≥100 MΩ
操作模式
增强型MOSFET
箱体转运
DRAIN
极性/通道类型
P-CHANNEL
Operating temperature range
-10…+80 °C
漏极-源极导通最大电阻
0.0092 Ω
脉冲漏极电流-最大值(IDM)
60 A
DS 击穿电压-最小值
40 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
5.4 W
Rotation angle
260 ±10 °
饱和电流
1
SI7463DP-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies






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