Vishay Intertechnologies SI7613DN-T1-GE3
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SI7613DN-T1-GE3
2668-SI7613DN-T1-GE3
晶体管 - 特殊用途
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Power Field-Effect Transistor, 17A I(D), 20V, 0.0087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
1最小包装量--
SI7613DN-T1-GE3详情
Vishay Intertechnologies SI7613DN-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
材料
polyester and polyolefin
终端数量
5
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Drain Current-Max (ID)
17 A
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
SQUARE
Package Style
小概要
Type of capacitor
ceramic
Kind of capacitor
MLCC
Capacitance tolerance
±0.1pF
Mounting
SMD
Case - inch
0201
Case - mm
0603
Capacitors series
GCQ
Gross weight
1833.33
Transport packaging size/quantity
46*46*40/3
Diameter before shrinkage
12 ±2 mm
Diameter after shrinkage
6 mm
Shrinkage temperature
135 °C
Operating temperature range °C
-40...+150
Operating temperature
-55...125°C
JESD-609代码
e3
ECCN 代码
EAR99
类型
thermoshrinkable braided sleeving
端子表面处理
Matte Tin (Sn)
电容量
7.8pF
端子位置
DUAL
终端形式
C 弯管
峰值回流焊温度(摄氏度)
260
Reach合规守则
not_compliant
时间@峰值回流温度-最大值(s)
40
JESD-30代码
S-XDSO-C5
资历状况
不合格
电介质
C0G (NP0)
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
P-CHANNEL
漏极-源极导通最大电阻
0.0087 Ω
脉冲漏极电流-最大值(IDM)
60 A
DS 击穿电压-最小值
20 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
52.1 W
Shrinkage ratio
2 : 1
饱和电流
1
Operating voltage
50V
长度
100 m
SI7613DN-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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