Vishay Intertechnologies SI7956DP-T1-GE3
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SI7956DP-T1-GE3
2668-SI7956DP-T1-GE3
晶体管 - 特殊用途
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大陆
立即发货

Small Signal Field-Effect Transistor, 2.6A I(D), 150V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8
1最小包装量--
SI7956DP-T1-GE3详情
Vishay Intertechnologies SI7956DP-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
6 Weeks
表面安装
YES
材料
thermoplastic
终端数量
6
晶体管元件材料
SILICON
外壳材料
2
Gross weight
6.85
Transport packaging size/quantity
42*28*23.5/1000
Purpose
Connecting and branching copper conductors
Number of terals
2min
Contact material
electrical steel
Nominal voltage
450 V
Maximum current
16 A
Wire cross-section
0.5...2.5 (20...14AWG) mm2
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
ROHS COMPLIANT, POWERPAK, SOP-8
Drain Current-Max (ID)
2.6 A
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
小概要
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
Matte Tin (Sn)
颜色
white
端子位置
DUAL
终端形式
C 弯管
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
30
JESD-30代码
R-XDSO-C6
资历状况
不合格
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
Operating temperature range
-60…+40 °C
漏极-源极导通最大电阻
0.105 Ω
DS 击穿电压-最小值
150 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
3.5 W
饱和电流
1
SI7956DP-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
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