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价格梯度
内地含税价
1
¥5.674309
10
¥5.353122
100
¥5.050115
500
¥4.764259
1000
¥4.494584
Vishay Intertechnologies SI7998DP-T1-GE3
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- 对比
SI7998DP-T1-GE3
2668-SI7998DP-T1-GE3
晶体管 - 特殊用途
--
大陆
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Power Field-Effect Transistor, 15A I(D), 30V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
--最小包装量--
¥
总价: ¥
SI7998DP-T1-GE3详情
Vishay Intertechnologies SI7998DP-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
6
晶体管元件材料
SILICON
外壳材料
2
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Drain Current-Max (ID)
15 A
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
小概要
Type of mounting element
lever
Kind of toggle
adjustable
Thread length
50mm
Lever length
63mm
Knob height
31mm
Handle material
zinc die-cast
Body colour
black
External thread
M6
Gross weight
77 g
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
Matte Tin (Sn)
端子位置
DUAL
终端形式
C 弯管
Reach合规守则
compliant
JESD-30代码
R-XDSO-C6
资历状况
不合格
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.0093 Ω
脉冲漏极电流-最大值(IDM)
60 A
DS 击穿电压-最小值
30 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
40 W
饱和电流
1
SI7998DP-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies






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