Vishay Intertechnologies SI9410BDY-T1-E3
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SI9410BDY-T1-E3
2668-SI9410BDY-T1-E3
晶体管 - 特殊用途
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Description: Small Signal Field-Effect Transistor, 6.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
1最小包装量--
SI9410BDY-T1-E3详情
Vishay Intertechnologies SI9410BDY-T1-E3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
Housing material
ABS UL94-V0
终端数量
8
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
Obsolete
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SOP-8
Drain Current-Max (ID)
6.2 A
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Relative humidity
35...85 %
Dielectric strength
2500 (50 Hz / 1 min) V
Ambient temperature during operation
-40...+80 °C
Load voltage
5...60 V
Transport packaging size/quantity
39.5*29.5*19/100
Gross weight
88.40
JESD-609代码
e3
ECCN 代码
EAR99
类型
Single-phase solid state relay SSR series
端子表面处理
Matte Tin (Sn)
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
深度
62 mm
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
30
JESD-30代码
R-PDSO-G8
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
Insulation resistance
100 (at Uinsp.dc=500V) MOhm min
Leakage current
5 mA
操作模式
增强型MOSFET
Control mode
with zero crossing control
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.024 Ω
DS 击穿电压-最小值
30 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
2.5 W
Load current
10 A
Control voltage
3...32 (DC) V
Switching time
8.3 ms max
饱和电流
1
高度
22.5 mm
宽度
45 mm
SI9410BDY-T1-E3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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