Vishay Intertechnologies SIR570DP-T1-RE3
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SIR570DP-T1-RE3
2668-SIR570DP-T1-RE3
晶体管 - 特殊用途
--
大陆
立即发货

Power Field-Effect Transistor,
1最小包装量--
SIR570DP-T1-RE3详情
Vishay Intertechnologies SIR570DP-T1-RE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
16 Weeks
表面安装
YES
材料
aluminized/polypropylene film - APET/CPP
终端数量
5
晶体管元件材料
SILICON
外壳材料
1
Type of capacitor
ceramic
Kind of capacitor
MLCC
Mounting
SMD
Case - inch
0603
Case - mm
1608
Capacitors series
KGQ
Gross weight
10.09
Transport package size/quantity
35*26*18.5/1000
Sealing temperature
180-190 °C
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Date Of Intro
2020-09-02
Drain Current-Max (ID)
77.4 A
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Turn-off Time-Max (toff)
100 ns
Turn-on Time-Max (ton)
66 ns
Operating temperature
-55...125°C
容差
±2%
ECCN 代码
EAR99
类型
Antistatic bag for sealing
电阻
surface (inner/outer surfaces) - 10^7-10^10 Ohm
颜色
translucent silver-gray
电容量
39pF
端子位置
DUAL
终端形式
FLAT
深度
228 mm
Reach合规守则
unknown
JESD-30代码
R-PDSO-F5
电介质
C0G (NP0)
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.0079 Ω
脉冲漏极电流-最大值(IDM)
200 A
DS 击穿电压-最小值
150 V
雪崩能量等级(Eas)
45 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
104 W
反馈上限-最大值 (Crss)
6.5 pF
Operating voltage
100V
宽度
305 mm
器件厚度
15 microns (2 layers)
SIR570DP-T1-RE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
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