Vishay Intertechnologies SIR802DP-T1-GE3
- 收藏
- 对比
SIR802DP-T1-GE3
2668-SIR802DP-T1-GE3
晶体管 - 特殊用途
--
大陆
立即发货

Power Field-Effect Transistor, 30A I(D), 20V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
1最小包装量--
SIR802DP-T1-GE3详情
Vishay Intertechnologies SIR802DP-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
5
晶体管元件材料
SILICON
外壳材料
1
Type of capacitor
ceramic
Kind of capacitor
MLCC
Mounting
SMD
Case - inch
0805
Case - mm
2012
Capacitors series
KGM
Gross weight
0.028 g
Rohs Code
有
Part Life Cycle Code
Obsolete
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Drain Current-Max (ID)
30 A
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Operating temperature
-55...125°C
容差
±1%
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
哑光锡
HTS代码
8541.29.00.95
电容量
22pF
端子位置
DUAL
终端形式
C 弯管
Reach合规守则
compliant
JESD-30代码
R-PDSO-C5
资历状况
不合格
电介质
C0G (NP0)
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.005 Ω
脉冲漏极电流-最大值(IDM)
70 A
DS 击穿电压-最小值
20 V
雪崩能量等级(Eas)
20 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
27.7 W
Operating voltage
50V
SIR802DP-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







哦! 它是空的。