Vishay Intertechnologies SISH892BDN-T1-GE3
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SISH892BDN-T1-GE3
2668-SISH892BDN-T1-GE3
晶体管 - 特殊用途
--
大陆
立即发货

Power Field-Effect Transistor,
1最小包装量--
SISH892BDN-T1-GE3详情
Vishay Intertechnologies SISH892BDN-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
16 Weeks
Housing material
PA66, white
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Gross weight
5.67
Transport packaging size/quantity
42*28*23.5/1000
Noal voltage
12/24 (DC) Vmin
Number of terals
4, non-insulated blade terminal 6.3min
ECCN 代码
EAR99
类型
connector (socket) series 70413
端子表面处理
Pure Matte Tin (Sn) - annealed
峰值回流焊温度(摄氏度)
260
深度
24.8 mm
Reach合规守则
not_compliant
时间@峰值回流温度-最大值(s)
40
饱和电流
1
高度
13.8 (housing) mm
宽度
27.7 (with flanges); 18.75 (housing) mm
SISH892BDN-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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