Vishay Intertechnologies SQ3427EEV-T1-GE3
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SQ3427EEV-T1-GE3
2668-SQ3427EEV-T1-GE3
晶体管 - 特殊用途
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大陆
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Small Signal Field-Effect Transistor, 5.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
1最小包装量--
SQ3427EEV-T1-GE3详情
Vishay Intertechnologies SQ3427EEV-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
Housing material
ABS UL94-V0
终端数量
6
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
Obsolete
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
Drain Current-Max (ID)
5.5 A
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Relative humidity
35...85 %
Dielectric strength
2500 (50 Hz / 1 min.) V
Ambient operating temperature
-40...+80 °C
Load voltage
~24...380 V
Transport packaging size/quantity
38*22*38/50
Gross weight
123.20
ECCN 代码
EAR99
类型
Single-phase solid state relay series SSR
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
深度
62 mm
Reach合规守则
unknown
时间@峰值回流温度-最大值(s)
40
JESD-30代码
R-PDSO-G6
配置
SINGLE WITH BUILT-IN DIODE
Insulation resistance
≥100 (at Uisp.dc=500V) MΩ
Leakage current
5 mA
操作模式
增强型MOSFET
Control mode
with zero crossing control
极性/通道类型
P-CHANNEL
JEDEC-95代码
MO-193AA
漏极-源极导通最大电阻
0.082 Ω
DS 击穿电压-最小值
60 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
5 W
Load current
16 A
保险丝
10x38 mm 10 A
Control voltage
4...32 (DC) V
反馈上限-最大值 (Crss)
85 pF
Switching time
≤8.3 ms
高度
35 mm
宽度
48 mm
SQ3427EEV-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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