Vishay Intertechnologies SQJ415EP-T1_GE3
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SQJ415EP-T1_GE3
2668-SQJ415EP-T1_GE3
晶体管 - 特殊用途
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大陆
立即发货

Power Field-Effect Transistor, 30A I(D), 40V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
1最小包装量--
SQJ415EP-T1_GE3详情
Vishay Intertechnologies SQJ415EP-T1_GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
20 Weeks
表面安装
YES
终端数量
4
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SO-8L, 4 PIN
Drain Current-Max (ID)
30 A
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Turn-off Time-Max (toff)
140 ns
Turn-on Time-Max (ton)
30 ns
Type of capacitor
ceramic
Kind of capacitor
MLCC
Capacitance tolerance
±0.1pF
Mounting
SMD
Case - inch
0201
Case - mm
0603
Capacitors series
GCQ
Gross weight
0.03 g
Operating temperature
-55...125°C
ECCN 代码
EAR99
电容量
3.4pF
端子位置
SINGLE
终端形式
鸥翼
Reach合规守则
unknown
参考标准
AEC-Q101
JESD-30代码
R-PSSO-G4
电介质
C0G (NP0)
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
极性/通道类型
P-CHANNEL
漏极-源极导通最大电阻
0.014 Ω
脉冲漏极电流-最大值(IDM)
120 A
DS 击穿电压-最小值
40 V
雪崩能量等级(Eas)
31.2 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
45 W
反馈上限-最大值 (Crss)
320 pF
Operating voltage
50V
SQJ415EP-T1_GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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