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价格梯度
内地含税价
1
¥8.107958
10
¥7.649017
100
¥7.216053
500
¥6.807598
1000
¥6.422262
Vishay Intertechnologies SQJ459EP-T1_GE3
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SQJ459EP-T1_GE3
2668-SQJ459EP-T1_GE3
晶体管 - 特殊用途
--
大陆
立即发货

Power Field-Effect Transistor, 52A I(D), 60V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
--最小包装量--
¥
总价: ¥
SQJ459EP-T1_GE3详情
Vishay Intertechnologies SQJ459EP-T1_GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
18 Weeks, 3 Days
表面安装
YES
终端数量
4
晶体管元件材料
SILICON
外壳材料
1
Transport packaging size/quantity
48*32*27/500
Noal resistance
22 kOhmin
Wear resistance
10000 cycles
Permissible deviation
20 %
Nominal power dissipation
2 W
Maximum operating voltage
250 V
Noise level
47 mV
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
Drain Current-Max (ID)
52 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Gross weight
21.60
ECCN 代码
EAR99
类型
Rotary potentiometer
端子位置
SINGLE
终端形式
鸥翼
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
unknown
时间@峰值回流温度-最大值(s)
未说明
JESD-30代码
R-PSSO-G4
配置
SINGLE WITH BUILT-IN DIODE
Insulation resistance
100 MOhm min
操作模式
增强型MOSFET
箱体转运
DRAIN
极性/通道类型
P-CHANNEL
Operating temperature range
-10…+80 °C
漏极-源极导通最大电阻
0.018 Ω
脉冲漏极电流-最大值(IDM)
200 A
DS 击穿电压-最小值
60 V
雪崩能量等级(Eas)
80 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
Rotation angle
260 ±10 °
SQJ459EP-T1_GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies






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