Vishay Intertechnologies SQJ481EP-T1_GE3
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SQJ481EP-T1_GE3
2668-SQJ481EP-T1_GE3
晶体管 - 特殊用途
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大陆
立即发货

Power Field-Effect Transistor, 16A I(D), 80V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
1最小包装量--
SQJ481EP-T1_GE3详情
Vishay Intertechnologies SQJ481EP-T1_GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
26 Weeks, 3 Days
Contact plating
tinned
表面安装
YES
Number of pins
36
终端数量
4
晶体管元件材料
SILICON
外壳材料
1
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
2.54mm
Electrical mounting
SMT
Connector pinout layout
2x18
Row pitch
2.54mm
Gross weight
2.19 g
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Drain Current-Max (ID)
16 A
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Turn-off Time-Max (toff)
60 ns
Turn-on Time-Max (ton)
30 ns
Operating temperature
-40...200°C
ECCN 代码
EAR99
端子位置
SINGLE
终端形式
鸥翼
Reach合规守则
unknown
Current rating
3A
参考标准
AEC-Q101
JESD-30代码
R-PSSO-G4
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
极性/通道类型
P-CHANNEL
漏极-源极导通最大电阻
0.08 Ω
脉冲漏极电流-最大值(IDM)
60 A
DS 击穿电压-最小值
80 V
雪崩能量等级(Eas)
30 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
Rated voltage
125V
反馈上限-最大值 (Crss)
130 pF
个人资料
bronze
Plating thickness
4µm
Flammability rating
UL94V-0
SQJ481EP-T1_GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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