Vishay Intertechnologies SQJA20EP-T1_GE3
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SQJA20EP-T1_GE3
2668-SQJA20EP-T1_GE3
晶体管 - 特殊用途
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大陆
立即发货

Power Field-Effect Transistor, 22.5A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
1最小包装量--
SQJA20EP-T1_GE3详情
Vishay Intertechnologies SQJA20EP-T1_GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
25 Weeks
表面安装
YES
材料
silicone
终端数量
4
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SMALL OUTLINE, R-PSSO-G4
Date Of Intro
2020-05-20
Drain Current-Max (ID)
22.5 A
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Turn-off Time-Max (toff)
65 ns
Turn-on Time-Max (ton)
35 ns
Type of enclosures accessories
case ring
Enclosure series
LC
Related items
TKC-LC145H,
Frame colour
red
Quantity in set/package
2pcs.
Gross weight
45 g
ECCN 代码
EAR99
端子位置
SINGLE
终端形式
鸥翼
Reach合规守则
unknown
参考标准
AEC-Q101
JESD-30代码
R-PSSO-G4
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.05 Ω
脉冲漏极电流-最大值(IDM)
82 A
DS 击穿电压-最小值
200 V
雪崩能量等级(Eas)
16 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
68 W
反馈上限-最大值 (Crss)
55 pF
SQJA20EP-T1_GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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