Vishay Intertechnologies SI2308CDS-T1-GE3
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SI2308CDS-T1-GE3
2668-SI2308CDS-T1-GE3
晶体管 - 特殊用途
--
大陆
立即发货

Small Signal Field-Effect Transistor,
1最小包装量--
SI2308CDS-T1-GE3详情
Vishay Intertechnologies SI2308CDS-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
28 Weeks
表面安装
YES
终端数量
3
晶体管元件材料
SILICON
外壳材料
1
Transport packaging size/quantity
33*38*23/1000
Type of bridge rectifier
three-phase
Max. off-state voltage
1.4kV
Max. forward impulse current
1kA
Electrical mounting
screw
Version
module - slim
Max. forward voltage
1.7V
Leads
M6 screws
Case
PWS-E flat
Mechanical mounting
screw
Kind of package
bulk
Features of semiconductor devices
glass passivated
Gross weight
225 g
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Drain Current-Max (ID)
2.6 A
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Execution
with flexible leads 75 mm
Body diameter
23 mm
Magnet diameter
11.1 mm
Resonance frequency
530 Hz
Maximum power
2 W
Permissible deviation of characteristics
15 %
JESD-609代码
e3
ECCN 代码
EAR99
类型
Electrodynamical Head (speaker) series S1300
端子表面处理
TIN
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
30
JESD-30代码
R-PDSO-G3
配置
SINGLE WITH BUILT-IN DIODE
阻抗
8 Ohm
操作模式
增强型MOSFET
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
Operating temperature range
-25...+55 °C
JEDEC-95代码
TO-236
漏极-源极导通最大电阻
0.144 Ω
Frequency range
530-5000 Hz
DS 击穿电压-最小值
60 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
Load current
127A
Sound pressure level (SPL)
112 dB
饱和电流
1
高度
4.2 mm
SI2308CDS-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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